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August 5, 2025

Spontaneous and self-oriented growth during chemical vapor epitaxy of single-crystalline MoS2

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Authors

ADAnnelies DelabieIKIryna KandybkaPKPawan Kumar

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Overview

Metal-organic chemical vapor epitaxy demonstrates improved MoS2 growth in wafers without sapphire templates, alleviating orientation challenges.

Key Points

  • Self-oriented growth of MoS2 avoids reliance on sapphire templates, improving crystallinity in manufacturing.
  • The process adjusts precursor adsorption rates, promoting spontaneous nucleation and growth of single-crystalline MoS2.
  • Van der Waals recrystallization plays a key role in eliminating twin boundaries, enhancing crystal quality.
  • Median carrier mobilities of 30 ± 5 cm²V⁻¹s⁻¹ indicate potential for industrial-scale applications in electronics.

Cite This Study

Delabie et al. (2025) studied this question.

synapsesocial.com/papers/689a0f93e6551bb0af8d111ahttps://doi.org/10.21203/rs.3.rs-7114151/v1
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Recrystallization‐Driven Formation of Single‐Crystalline MoS <sub>2</sub> by Metal‐Organic Chemical Vapor Epitaxy2026
  2. 2Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics2026 · 5 citations
  3. 3Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 to annihilate grain boundaries for scalable 2D electronics2025 · 1 citations
  4. 4Unidirectional Epitaxy of Wafer-Scale MoS<sub>2</sub> on Sapphire via Growth Kinetics Control2025 · 1 citations
  5. 5Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control2024 · 164 citations