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July 29, 2026Small Methods

Recrystallization‐Driven Formation of Single‐Crystalline MoS 2 by Metal‐Organic Chemical Vapor Epitaxy

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Authors

IKIryna KandybkaImec the NetherlandsPKPawan KumarIMECHSHenry Medina Silva

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Overview

Randomized trial demonstrates enhanced MoS2 quality in semiconductor applications, indicating improved electronic performance.

Key Points

  • The study aims to develop a method for creating high-quality single-crystalline MoS2 using MOCVD without template engineering.
  • Employs metal-organic chemical vapor deposition (MOCVD) for MoS2 growth.
  • Controls precursor adsorption to reduce the nucleation and growth rate.
  • Fabricates transistors from single-crystalline MoS2 layers on sapphire substrates.
  • Achieved a single-crystalline MoS2 monolayer with carrier mobilities of 30 ± 5 cm2 V−1 s−1.
  • Demonstrated successful recrystallization during coalescence of 60°-oriented domains.
  • Showcased compatibility with bonding-to-wafer integration approaches.

Cite This Study

Kandybka et al. (2026) studied this question.

synapsesocial.com/papers/6a69a25ec8da07d9defa5a50https://doi.org/10.1002/smtd.70892
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