Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
September 16, 2025ACS Applied Electronic Materials

Unidirectional Epitaxy of Wafer-Scale MoS2 on Sapphire via Growth Kinetics Control

View Full Paper
Ask AI
Bookmark
Share

Authors

RDRongxiang DingNational University of Defense TechnologyZZZiyang ZhangQingdao UniversityHWHao WuHunan University of Science and Technology

Discussion

Loading...

Member takes

Implication

Epitaxy demonstrates enhanced MoS2 growth on sapphire, suggesting improved 2D semiconductor applications.

Key Points

  • High-quality wafer-scale MoS2 films achieved with single crystallinity and uniformity, confirming advanced growth techniques.
  • Epitaxy process led to individual MoS2 domains showing up to 118 cm2·V–1·s–1 mobility and exceeding 1010 on/off ratio.
  • Control over growth kinetics significantly improves nucleation density, enhancing the overall domain size and uniformity.
  • Methodologies included CVD, dual-source delivery, and two-stage annealing to refine the MoS2 film characteristics.

Cite This Study

Ding et al. (2025) studied this question.

synapsesocial.com/papers/68d4508231b076d99fa5848chttps://doi.org/10.1021/acsaelm.5c01522
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Anomalous Lattice Vibrations of Single- and Few-Layer MoS<sub>2</sub>2010 · 4,877 citations
  2. 2Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit2020 · 45 citations
  3. 3The Oxidation of Molybdenum★1958 · 66 citations
  4. 4Edge-Catalyst Wetting and Orientation Control of Graphene Growth by Chemical Vapor Deposition Growth2014 · 78 citations
  5. 5Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS<sub>2</sub> Continuous Films2017 · 541 citations