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Demonstrates enhanced performance of MS-MOSFET in nanoscale technology, indicating a cost-effective alternative to FinFETs.
The short‐channel effects (SCEs) limit the performance of traditional bulk planar MOSFETs when scaled down to the nanoscale. To mitigate SCEs, this paper introduces a novel MOSFET with an intrinsic channel and modified source (MS‐MOSFET). The source of the MS‐MOSFET is modified by incorporating an additional dopant portion of opposite polarity. The MS‐MOSFET is simulated using TCAD tools as a semiconductor drift‐diffusion solver. Simulations show that the I ON /I OFF ratio of the MS‐MOSFET is higher than 10 + 4 at the channel length of 10 nm, whereas this ratio for a comparable intrinsic‐channel regular planar bulk MOSFET is smaller than 2. Modifying the source alleviates the SCEs. Compared to FinFETs, the MS‐MOSFET has a simple planar structure that can be fabricated by the low‐cost CMOS technology.
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Iraj Sheikhian (2026) studied this question.
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