Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

Ho Kim Dan; Pham T. Vinh; Le Phuong Phuong Long; Huynh Thi Phuong Thuy; Nguyen Dinh Hien

doi:10.1039/d6na00063k

January 1, 2026Nanoscale AdvancesOpen Access

Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

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Key Points

The aim is to systematically investigate the hot electron energy-loss rates in specific semiconductor structures.
Conducted a detailed examination of quantum wells in GaSb/InAs, GaAs/AlAs, and GaN/AlN materials.
Analyzed electron interactions with longitudinal optical phonons under finite-square confinement.
Identified reduced energy-loss rates in the investigated nanostructured materials.
Demonstrated that finite-square confinement enhances electron behavior significantly.

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Implication

Study examines hot electron energy-loss rates in various semiconductor quantum wells, indicating potential for enhanced performance.

Abstract

This study offers a thorough and systematic examination of the hot electron energy-loss rate (ELR) within GaSb/InAs, GaAs/AlAs, and GaN/AlN finite-square geometrical QWs owing to electron--longitudinal optical (LO)-phonon coupling via...

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Dan et al. (2026) studied this question.

synapsesocial.com/papers/6a168b160c924ddd1bd59f3c https://doi.org/10.1039/d6na00063k

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Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

Key Points

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Implication

Abstract

Discussion

Cite This Study

Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials

Key Points

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Implication

Abstract

Discussion

Cite This Study

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