Electron heating in a multiple-quantum-well structure below 1 K

This is the authors' abstract. We don't add key points for this paper.

We have measured the electron-energy-loss rate in an n-doped GaAs-AlₓGa_1-xAs heterostructure by finding the power required to establish a steady-state temperature offset between the electrons and the lattice. The measurement utilizes the temperature dependence of the resistance as a self-thermometer; heat is injected by an additional dc current. We find that for our sample the energy relaxation rate below 1 K is τ_ε^-1=(2.5×10⁶)T³ sec^-1 K^-3.