InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source

InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) structures were grown on 3-inch GaAs (100) substrates by solid source molecular beam epitaxy using polycrystalline GaP as a phosphorous source. The inclusion of a 5 nm thick AlGaAs layer between the InGaP and InGaAs yielded the best electrical characteristics, where the room temperature mobility and sheet carrier concentration were 5200 cm 2 /V·s and 1.8×10 12 cm -2 , respectively. A 5×100 µ m 2 HEMT device fabricated using this structure yielded an extrinsic transconductance of 80 mS/mm.