Observation of Donor-Related Deep Levels in GaxIn1-xP (0.52≤x≤0.71)

This paper reports donor-related deep levels in Ga x In 1- x P (0.52≤ x ≤0.71). S-, Se- and Si-doped GaInP grown by chloride-vapor-phase epitaxy were used for the measurements. At the Ga composition x of 0.52 that is lattice matched to GaAs, a deep level was observed for S-doped GaInP but not for Se- or Si-doped GaInP. Se-doped GaInP with larger x values was also studied, and the deep level was observed for x larger than 0.56. It is found that the behavior due to these donor-related deep levels, with effects such as persistent photoconductivity and Ga-composition dependence, is the same as for DX centers in AlGaAs.