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Investigates magnetism in Ru-deficient SrRuO3 thin films, highlighting effects of defect engineering.
While stoichiometric SrRuO3 (SRO) is a metallic itinerant ferromagnet with relatively homogeneous magnetization, Ru deficiency provides a powerful route to alter its electronic transport and depth-dependent magnetic properties. Ru-deficient SRO thin films grown by radio frequency high-oxygen pressure sputtering were investigated using a combination of x-ray reflectivity, polarized neutron reflectometry, off-specular neutron scattering, scanning transmission electron microscopy with energy-dispersive x-ray spectroscopy, electrical transport, and magnetometry. Structural and compositional analyses reveal that Ru deficiency is intrinsic to the films, with an enhanced deficiency at the interfaces. As a result, coherent electronic transport is suppressed and saturation magnetization is reduced, while the Curie temperature remains largely unaffected, placing Ru-deficient SRO in a regime consistent with ferromagnetic insulator-like behavior. Depth- and lateral-resolved magnetic measurements further indicate that the interfacial regions remain ferromagnetic, with a reduced in-plane magnetic projection consistent with enhanced perpendicular magnetic anisotropy that keeps the local magnetization predominantly out-of-plane. Our results establish Ru deficiency as a key control parameter governing transport, magnetization, and anisotropy in SRO thin films and highlight defect and interface engineering as powerful routes to tailor interfacial magnetism in correlated oxide heterostructures.
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Lima et al. (2026) studied this question.
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