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This study aims to elucidate the role of oxygen vacancies in stabilizing antiferromagnetic order in RuO2 thin films.

June 13, 2026Small

Oxygen Vacancy‐Mediated Stabilization of Antiferromagnetic Order in RuO ₂ Thin Films

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Randomized trial shows oxygen vacancies enhance antiferromagnetism in RuO2 thin films, suggesting a route for improving magnetic properties.

This study aims to elucidate the role of oxygen vacancies in stabilizing antiferromagnetic order in RuO2 thin films.
Used exchange bias as a local probe to assess antiferromagnetism in RuO2.
Investigated RuO2/La0.5Sr0.5CoO3 bilayers with varying thicknesses and oxygen vacancy contents.
Performed density-functional calculations to evaluate the impact of oxygen vacancies on magnetic states.
Antiferromagnetism in RuO2 is fragile but significantly stabilized by oxygen vacancies.
The exchange bias field increased with decreasing RuO2 thickness, correlating with rising oxygen vacancy content.
Oxygen vacancies expanded the energy difference between antiferromagnetism and paramagnetism by up to an order of magnitude, confirming their critical role.

Han et al. (2026) studied this question.

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Randomized trial shows oxygen vacancies enhance antiferromagnetism in RuO2 thin films, suggesting a route for improving magnetic properties.