Design and Simulation of Two-Stage Cascaded Low Noise Amplifier with Microstrip at 1.4 GHz, with a Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction

This study presents a design for a two-stage low noise amplifier (LNA) employing microstrip technology. The optimization outcomes results of the parameters of the Angelov model, with the grid length of 0.5 μm, can be implemented on Advanced Design System (ADS) for microwave simulations. Our research involves the utilization of this large-signal transistor in the development of a low noise amplifier operating at a frequency of 1.4 GHz (L-band). The LNA design incorporates a T-matching network composed of reactive element at both the input and the output terminals. At the frequency of 1.4 GHz, the low noise amplifier (LNA) exhibits a gain of 21.43 dB and a noise figure NF of 0.40 dB. The input reflection coefficient S11 and output return loss S22 are respectively –17.17 and –15.08 dB, with a stability factor K equal to 1.10. The output power is measured at 26.40dBm when the input power is set at 5.10 dBm.