High-quality heteroepitaxy of ε-Ga₂O₃ films on 4H-SiC substrates grown via MOCVD

High-quality ε-Ga 2 O 3 epitaxial layers were grown on a 4H-SiC substrate via MOCVD. A (004) XRC FWHM of the ε-Ga 2 O 3 epitaxial layer as small as 0.09° (341 arcsec) is achieved.