⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

May 1, 1985Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopy

K. Takayanagi Y. Tanishiro Masaetsu Takahashi S. Takahashi

View at Publisher

Ask AI

Bookmark

Share

Abstract

Structural analysis of the surface reconstructions investigated by ultrahigh vacuum (UHV) transmission electron microscopy (TEM) and diffraction (TED) is shown. By TED intensity analysis a new structural model of Si(111)-7×7 is derived. The model basically consists of 12 adatoms arranged locally in the 2×2 structure, nine dimers on the sides of the triangular subunits of the 7×7 unit cell and a stacking fault layer. UHV–HREM of Si (111)-7×7 surface is commented.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Takayanagi et al. (1985) studied this question.

synapsesocial.com/papers/6a1820f33aabde875b1356fe https://doi.org/10.1116/1.573160

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Microstructural and optical characterization of Erbium-doped calcium tungstate films on yttria-stabilized zirconiaJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · Wed,
2Oxygen-partial-pressure modulation of the near-infrared photoresponse in reactively sputtered SiO2/Ge-nanocrystal/SiO2/p-Si heterostructuresJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · Wed,
3High responsivity self-powered photodetectors based on p-Si/ZnO heterojunctionJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · Wed,
4A tutorial on the Fourier transform and discrete Fourier transform, with comments on the Hilbert transform, in the context of denoising spectraJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · Wed,
5Dose- and exposure-controlled stop-flow atomic layer deposition of TiO2 in deep macroporous silicon: Quantifying infiltration by energy-dispersive x-ray line profilingJournal of Vacuum Science & Technology A Vacuum Surfaces and Films · Thu,

More from Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Ti/Pt/Au ohmic contacts to β-Ga2O3Thu,
Phosphonate containing hybrid layers using atomic and molecular layer depositionTue,
Microstructure and corrosion properties of N–Cr co-doped amorphous carbon coatings for proton exchange membrane fuel cell bipolar platesTue,
Impact of plasma conditioning-state evolution on Cl2/Ar plasma-assisted Si atomic layer etchingFri,
Polyurea films deposited by molecular layer deposition for surface and sidewall passivation during HF plasma etching of high-aspect-ratio structuresFri,