We report the diffraction of He atoms at the Si(111) 7×{}7 reconstructed surface. The atom diffraction patterns consist of numerous sharp peaks filling out the seventh-order net observed by low-energy electron diffraction (LEED). In contrast to low-energy electron diffraction, the diffraction intensities in this seventh-order net are determined by only the outermost exposed layer of silicon atoms. These results should be sufficient to allow a semiclassical scattering calculation to test critically the various structural models which have been proposed for this reconstruction.
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Cardillo et al. (1979) studied this question.
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