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January 1, 2026Materials AdvancesOpen Access

An interface-enabled dual response in a self-biased n-Bi ₂ S ₃ /porous Si/p-Si heterostructured photodetector

Douaa B. Fahad Haitham T. Hussein Ethar Yahya Salih Mustafa Kareem

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Key Points

The aim is to evaluate the performance of a self-biased n-Bi2S3/porous Si/p-Si heterojunction photodetector for visible and NIR detection.
Rapid pulsed laser deposition (PLD) was used to fabricate the heterojunction.
The device structure includes n-Bi2S3, porous silicon, and p-Si layers.
The device effectively operates in dual visible and NIR detection ranges, showcasing improved self-powered capabilities.

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Abstract

Rapid-PLD fabricated n-Bi 2 S 3 /porous Si/p-Si heterojunction enables dual visible–NIR self-powered photodetection.

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Cite This Study

Fahad et al. (2026) studied this question.

synapsesocial.com/papers/6a192d65fab5b468c44163f2 https://doi.org/10.1039/d6ma00425c

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