Reduction of chemical species with redox potentials above the apparent conduction band edge of p-Si were found to be possible with illuminated p-Si in contact with nonaqueous electrolytes. Analysis of the wavelength dependence of the photoreduction current and capacitance data as a function of electrode potential, ac signal frequency, and light intensity shows that this supra-conduction-band-edge reduction is the result of band-edge unpinning, rather than the result of a hot-electron injection process. The band-edge unpinning is caused by the formation of an inversion layer in illuminated p-Si.
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Turner et al. (1980) studied this question.
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