Current-versus-voltage characteristics of bulk n-type AlxGa1−xAs devices are examined for material compositions 0.27<x<0.43. Preliminary experimental evidence indicates that the electron velocity saturates at a composition xs=0.38±0.02 above a threshold electric field of 2.4 kV/cm. The carrier saturation velocity is estimated to be 3.3×106 cm/sec. The direct-indirect transition of AlxGa1−xAs at 300°K, inferred from transport measurements, is estimated to be in the range 0.45–0.48.
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Immorlica et al. (1974) studied this question.
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