Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 15, 1968Physical Review

Band Gap of Gallium Phosphide from 0 to 900°K and Light Emission from Diodes at High Temperatures

View Full Paper
Ask AI
Bookmark
Share

Authors

MLMichael LorenzGesundheitszentrum BitterfeldGPG. D. PettitNational Taipei University of TechnologyRTR. C. TaylorMerck & Co., Inc., Rahway, NJ, USA (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Lorenz et al. (1968) studied this question.

synapsesocial.com/papers/6a1a4e4c97d4ffb2999bb5a8https://doi.org/10.1103/physrev.171.876
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Bound Excitons in GaP1963 · 186 citations
  2. 2Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt1968 · 16 citations
  3. 3Measurement of the Refractive Indices of Several Crystals1965 · 825 citations
  4. 4Vapor Growth of GaP on GaAs Substrates1965 · 41 citations
  5. 5Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature1967 · 70 citations