Transport measurements on gated GaAs/AlₓGa_1-xAs heterostructures over a wide range of electron densities are reported. Experimental observations of the crossover from weak to strong localization are compared with theoretical predictions. Agreement is found between localization lengths obtained from hopping transport measurements at low density and a scaling theory estimate from the classical Drude conductivity at high density.
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Keuls et al. (1997) studied this question.
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