Electrically programmable fuse-type polymer memory devices based on hyperbranched copper phthalocyanine polymer thin films are fabricated. The devices have novel write-once-read-many (WORM) memory characteristics, with a high ON/OFF current ratio (of 106) and a high electrical stability, thus opening up the possibility of a low-cost mass production of high-performance, nonvolatile polymer memory devices.
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Choi et al. (2008) studied this question.
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