What question did this study set out to answer?

To measure the absolute values of electron drift velocity, diffusion coefficient, and trapping time in gallium arsenide across varying electric fields and temperatures.

October 15, 1968Physical Review

Transport Properties of GaAs

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Authors

JRJ. G. RuchStanford University GKG. S. KinoCenter for Nanoscale Science and Technology

Discussion

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Implication

Experimental study demonstrates field-dependent electron drift velocity and diffusion in gallium arsenide, revealing intervalley transfer dynamics.

Key Points

To measure the absolute values of electron drift velocity, diffusion coefficient, and trapping time in gallium arsenide across varying electric fields and temperatures.
Fabricated reversed-bias Schottky barrier-I-n+ devices using semi-insulating boat-grown gallium arsenide oriented in the [100] and [111] crystal directions.
Injected 0.1-nanosecond pulses of high-energy electrons near the cathode to generate a charge sheet, calculating transit time and velocity from the width of the induced current pulses across fields up to 14 kV/cm and temperatures from 160 to 340 K.
Demonstrated a low-field electron mobility of 7500 cm²/V sec, a threshold field of 3300 V/cm, and an initial negative differential mobility of 2600 cm²/V sec, closely matching Butcher-Fawcett theory.
Found that the diffusion coefficient peaked sharply at 900 cm²/sec at the threshold field before falling below 200 cm²/sec at high fields, diverging from theoretical predictions due to intervalley transfer velocity fluctuations.

Cite This Study

Ruch et al. (1968) studied this question.

synapsesocial.com/papers/6a1bd395ea84844e355f09cb https://doi.org/10.1103/physrev.174.921

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October 15, 1968Physical Review

Transport Properties of GaAs

View Full Paper

Ask AI

Bookmark

Authors

JRJ. G. RuchStanford University GKG. S. KinoCenter for Nanoscale Science and Technology

Discussion

Member takes

Implication

Experimental study demonstrates field-dependent electron drift velocity and diffusion in gallium arsenide, revealing intervalley transfer dynamics.

Key Points

To measure the absolute values of electron drift velocity, diffusion coefficient, and trapping time in gallium arsenide across varying electric fields and temperatures.
Fabricated reversed-bias Schottky barrier-I-n+ devices using semi-insulating boat-grown gallium arsenide oriented in the [100] and [111] crystal directions.
Injected 0.1-nanosecond pulses of high-energy electrons near the cathode to generate a charge sheet, calculating transit time and velocity from the width of the induced current pulses across fields up to 14 kV/cm and temperatures from 160 to 340 K.
Demonstrated a low-field electron mobility of 7500 cm²/V sec, a threshold field of 3300 V/cm, and an initial negative differential mobility of 2600 cm²/V sec, closely matching Butcher-Fawcett theory.
Found that the diffusion coefficient peaked sharply at 900 cm²/sec at the threshold field before falling below 200 cm²/sec at high fields, diverging from theoretical predictions due to intervalley transfer velocity fluctuations.

Cite This Study

Ruch et al. (1968) studied this question.

synapsesocial.com/papers/6a1bd395ea84844e355f09cb https://doi.org/10.1103/physrev.174.921

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