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December 1, 1966Journal of Applied Physics

Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on Germanium

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Authors

LBL. C. BobbFord Motor Company (United States)HHH. HollowayWestern UniversityKMK. H. MaxwellUniversity of Alabama at Birmingham

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Bobb et al. (1966) studied this question.

synapsesocial.com/papers/6a1bd88cbc71fb1015a906cchttps://doi.org/10.1063/1.1708118
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  5. 5Preparation and Properties of GaAs-GaP, GaAs-Ge, and GaP-Ge Heterojunctions1964 · 30 citations