Modeling and Simulation of Single-Electron Transistor (SET) with Aluminum Island Using Neural Network

SET is important in the field of nanoelectronics since a decade. This paper presents electrical characteristic of Single-Electron Transistor (SET) with Aluminum Island using Neural Network. The I-V characteristic of the Single-Electron Transistor (SET) is predicted according to different parameters (V G , T, V D , C, and R). The simulation process is based on analytical transistor model and neural network transistor model. Single Electron Transistor (SET) is the simplest device in which the effect of Coulomb blockade can be observed.