We have fabricated high-mobility, one dimensional wires in GaAs-AlGaAs heterostructures and measured the resistance as a function of magnetic field and temperature. Because of the size of the devices and the high mobility, only a few channels carry the current at 35 mK with minimal scattering. Fluctuations in the resistance as a function of magnetic field due to quantum interference are observed for 0ωc{τ}300, where ωc is the cyclotron frequency and {τ} is the scattering time, superimposed upon Shubnikov--de Haas oscillations and the Hall effect.
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Timp et al. (1987) studied this question.
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