Semiconductor thin films are more than just materials—they are catalysts driving MEMS sensor technology toward enhanced performance, miniaturization, and cost-effectiveness. Recent innovations have highlighted their use, such as flexible transparent conductors and wide-bandgap materials, opening new possibilities—from wearable devices for medical applications to robust solutions for harsh environments. This perspective article explores the critical contributions of semiconductor thin films, including amorphous silicon (a-Si), polysilicon, silicon carbide (SiC), gallium nitride (GaN), and indium tin oxide (ITO), across a wide range of applications, from automotive systems to IoT-enabled smart technologies. SiC and GaN, known for their resilience in extreme conditions, and ITO, crucial for transparent, conductive devices, exemplify the expanding capabilities of these materials in industry 4.0 applications. Moreover, the transition from MEMS to NEMS is gaining attention, driven by advances in semiconductor thin film synthesis and design, which enable unprecedented device scaling and sensitivity. We also address emerging challenges, such as scalability and material consistency, and future directions for these materials in the development of future smart, interconnected and high-performance electronics systems.
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Fraga et al. (2025) studied this question.
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