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A concept for a short-wavelength compact laser is proposed, in which second-harmonic coherent light is produced by converting fundamental light lased in a vertical-cavity surface-emitting laser. A layer is incorporated inside the laser cavity particularly for efficient second-harmonic generation. This layer consists of second-order optical nonlinear crystals which are preferably III–V- or II–VI-system compound semiconductors epitaxially grown with crystal orientation tilted from <100>. Simulation indicates that the device will produce several hundred µ W with AlAs/GaAs alternating layers for second-harmonic generation and an InGaAs active layer for lasing.
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Yamada et al. (1996) studied this question.
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