We report the first operation of ZnSe-ZnMgSSe double-heterostructure photopumped blue lasers with a threshold excitation intensity at 150 kW/cm 2 at room temperature. The lasing was confirmed by measuring the polarization. This result indicates that ZnMgSSe is a promising material for the cladding layer of a blue laser diode. Until now, no material had been lattice-matched to a GaAs substrate and had sufficient band-gap energy. If p-type and n-type doping is possible, this ZnSe-ZnMgSSe double heterostructure can be applied to a blue laser diode.
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Okuyama et al. (1992) studied this question.
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