We report the characteristics of optically pumped stimulated emission in Zn 0.80 Cd 0.20 Se-ZnS 0.08 Se 0.92 multiple quantum well (MQW) structures fabricated by metalorganic molecular beam epitaxy (MOMBE). At room-temperature (290 K), laser operation at 504 nm was achieved with the threshold excitation intensity ( I th ) of 66 kW/cm 2 under pulsed excitation condition. Laser operation up to 400 K has been observed in this MQW structure.
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Kawakami et al. (1991) studied this question.
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