Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers

The optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effects taken into account. Both diffusion and drift components are incorporated into the calculation of leakage current. Optimized structures are obtained for CdZnSe-based lasers with different structures through minimizing the threshold current density. A minimum current density of about 200 A/cm/sup 2/ is obtained for a Cd/sub 0.2/Zn/sub 0.8/Se/ZnS/sub 0.06/Se/sub 0.94//Zn/sub 0.75/Mg/sub 0.25/S/sub 0.42/Se/sub 0.58/ modified MQW laser.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>