Deposition of diamond-like carbon film using electron cyclotron resonance plasma

Hard diamond-like carbon films were deposited on Si(100) substrates using a CH4 plasma created through electron cyclotron resonance (ECR) heating. The ECR plasma was excited by a Lisitano coil. These films could be deposited with a negative dc bias (−200 V) or a rf-induced negative self-bias (−100 V) on the substrates. The deposition rate of the film was about 2.3 Å/s. The deposited films were characterized by Raman spectroscopy and near-edge x-ray absorption fine structure analysis.