Experimental study demonstrates a semiconducting transition in few-layer epitaxial graphene via covalent nitrophenyl grafting, highlighting a route to bandgap engineering.
The addition of nitrophenyl groups to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds changed the electronic structure and transport properties of the EG from near-metallic to semiconducting.
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Bekyarova et al. (2009) studied this question.
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