Staggered heterojunctions-based tunnel-FET for application as a label-free biosensor

In this work, on the basis of dielectric modulation, a heterojunction (HETJ) surrounding gate (SRG) tunnel field effect (TFET) biosensor has been proposed. Due to the presence of biomolecules having different dielectric constant in the nanogap region of the biosensor, sensing has been performed. The sensitivity of the biosensor has been indicated using the traditional change in threshold voltage as well as in terms of ION/IOFF ratio. The results obtained from TCAD device simulation reveals that the proposed HETJ-based biosensor provides higher sensitivity as compared to other existing homojunction (HJ)-based biosensors.