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Validation explores surface reactions in silicon etching, highlighting implications for industrial processing.
The objective of this paper is the validation of a surface reaction mechanism for silicon etching in low-pressure chlorine plasmas. We employ a quasi-one-dimensional fluid model to model the experimental conditions of Khater and Overzet [Plasma Sources Sci. Technol. 13, 466 (2004)]. This model couples self-consistently the plasma fluid equations with the surface reaction mechanism derived from the available literature. Based on the comparison between the experiments and modeling results, the best set of etch yield parameters is proposed for the conditions typical for industrial plasma processing. The influence of these etch yield parameters on the gas-phase plasma is also discussed.
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Levko et al. (2023) studied this question.
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