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Low-field (third-derivative) electroreflectance spectra taken on fully depleted space-charge regions are shown to be linear in the modulation potential and free from experimentally induced line-shape distortions due to modulation wave-form, dc bias, or barrier-potential effects. Using a metal-semiconductor (Schottky diode) configuration, accurate threshold energies of the E₀^' triplet of Ge are obtained. The observed spin-orbit-splitting energy of the valence band confirms that the highest transition also occurs at Γ.
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D. E. Aspnes (1972) studied this question.
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