Linearity and Noise Evaluation Compound Semiconductor-Based Highly Sensitive Junctionless Gate-All-Around FET Biosensor

A nanocavity-embedded nanowire junctionless field effect transistor (NW JLFET) biosensor based on III-V compound semiconductors in GaAs/InGaN/InGaP is described in detail in this article. By interacting with biological molecule, the compound semiconductor biosensor changes electrostatic characteristics that are crucial for the detection process. We investigate important parameters such as drain current, transconductance, and linearity in terms of their sensitivity to changes in dielectric constants and their relationship. InGaAs, InGaN and InGaP NW JLFETs were further investigated to optimize their material properties for use as biosensors. Furthermore, this study evaluates the effect of the dielectric constants of biomolecules on VIP2, VIP3, IIP3, GM2, GM3, and IMD3 of all three devices. The benchmarking is performed to provide sensitivity of 7.8×105, ION/IOFF ratio of 1.31×108, and SS of 61 mV/dec when the cavity was fully filled of biomolecule for the InGaAs NW JLFET-based biosensor (D1).