Disorder effects in ion-implanted niobium thin films

This is the authors' abstract. We don't add key points for this paper.

New data on the depression of Tc related to disorder effects for N⁺ ion-implanted niobium films are presented, extending up to a resistivity ρ₀{}150 {μ}{Ω} cm. The results are discussed in the framework of the existing theories. Tunneling measurements on the same ion-implanted films show a fall of the measured value of 2{Δ}(0)/kTc below the BCS value for very disordered films.