Charge transfer and Fermi level shift inp-doped single-walled carbon nanotubes

The electronic properties of p-doped single-walled carbon nanotube (SWNT) bulk samples were studied by temperature-dependent resistivity and thermopower, optical reflectivity, and Raman spectroscopy. These all give consistent results for the Fermi level downshift (ΔEF) induced by doping. We find ΔEF≈0.350.3em0exeV and 0.500.3em0exeV for concentrated nitric and sulfuric acid doping respectively. With these values, the evolution of Raman spectra can be explained by variations in the resonance condition as EF moves down into the valence band. Furthermore, we find no evidence for diameter-selective doping, nor any distinction between doping responses of metallic and semiconducting tubes.