Observation of Dislocations in V3Si Single Crystals

An etch-pitting solution which causes etch pits at the point of intersection of dislocations with the (100) and (111) surfaces of V3Si single crystals is described. The effect of second-phase particles imbedded in the single-crystal matrix on the density and distribution of the dislocations is discussed. The observation of the dislocation arrangements suggest that the slip system in V3Si is {100} 〈001〉.