Hafnium dioxide films implanted with varying concentrations of Xe have been investigated using photoelectrochemical techniques. Photocurrent spectra exhibited pronounced sub-band gap photo-responses and the dependence of the photocurrent on the potential was found to follow Poole-Frenkel behavior for the most heavily implanted film. Cathodic photocurrents were observed for all of the films at potentials above the flatband potential, which can be explained by a tunnelling mechanism of the electron against the field. Annealing of the films created a partial reordering.
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Newmark et al. (1989) studied this question.
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