By inserting a thin AlO δ barrier layer between the electrode and tantalum oxide resistive switching layer, the triple-layer ReRAM devices with improved resistive switching performance are demonstrated. Pulsed programming measurements without external current compliance show 10 11 cycle endurance without performance degradation. The ON/OFF ratio exceeds 1000. Low operation current is achieved using a smaller SET compliance current. Multilevel states are obtained through adjusting SET and RESET conditions, and retention longer than 10 4 s at 125°C is reported.
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Wu et al. (2013) studied this question.
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