We report on the theoretical and measured characteristics of triple-barrier metal (CoSi/sub 2/)-insulator(CaF/sub 2/) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics. First, we analyze theoretical characteristics of an M-I RTT, and then show fabrication process and current-voltage (I-V) characteristics obtained at 77 K, in which several degradations are observed: large resonance voltage, low peak-to-valley (P-V) ratios at negative differential resistance (NDR), and reverse base current. Analysis, taking several parasitic elements (e.g., base resistance, substrate resistance and leakage currents connected to the intrinsic transistor) into account, explains observed characteristics well. Finally, we show the first transistor action with large P-V ratios at 300 K, which is achieved by reducing collector-emitter leakage currents.
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Suemasu et al. (1995) studied this question.
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