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Cadmium arsenide has a large concentration of high-mobility carriers (electrons) and possesses a small lattice thermal conductivity. It should therefore exhibit a large Righi-Leduc effect. This effect has been measured in the temperature range 300-64°K in magnetic fields of 500-12 × 103 Oe and results shown to agree with predicted values for a degenerate semiconductor. Values of the Righi-Leduc co-efficient of 0·66 × 104 cm2 v-1 sec-1 at room temperature and 1·4 × 104 cm2 v-1 sec-1 at 85°K have been obtained in low magnetic fields.
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Lovett et al. (1967) studied this question.
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