The strength of the infrared absorption from silicon donors and silicon acceptors in gallium arsenide

Hall measurements have been made on Bridgman and liquid-phase epitaxial silicon-doped gallium arsenide. The samples were then rendered transparent by e--irradiation and the absorption due to the localized vibrations of SiGa donors and SiAs acceptors was measured. These data were used to obtain values of 1.99e and 1.75e respectively for the apparent charges of the two defect modes, with the assumption that there were no other donors or acceptors present. This calibration is very similar to an earlier one due to Spitzer and co-workers (1968-69), but is significantly different with respect to the interpretation of electrical data for LPE layers.