Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 16, 1984Physical Review Letters

Reordering of Reconstructed Si Surfaces upon Ge Deposition at Room Temperature

View Full Paper
Ask AI
Bookmark
Share

Authors

HGH.‐J. GossmannAxcelis Technologies (United States)LFL. C. FeldmanRutgers, The State University of New JerseyWGW. M. GibsonRutgers, The State University of New Jersey

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Gossmann et al. (1984) studied this question.

synapsesocial.com/papers/6a1ea50fedce398519af19e3https://doi.org/10.1103/physrevlett.53.294
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion Scattering1981 · 84 citations
  2. 2Hydrogen Vibration on Si(111) 7 × 7: Evidence for a Unique Chemisorption Site1983 · 107 citations
  3. 3Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy1984 · 678 citations
  4. 4Structure and Adsorption Characteristics of Clean Surfaces of Germanium and Silicon1959 · 883 citations