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Hall coefficient R and resistivity of various p-type germanium samples which contained the same concentration of acceptors N₀ but different amounts of compensating donors N₃ have been measured between 300^ and 1. 3^. The process of impurity conduction at low impurity concentrations differs from that at high concentrations in that it requires the presence of empty majority centers. As in the case of n-type Ge, the two different impurity conduction processes could be distinguished by observing the change of resulting from a change in the degree of compensation in the temperature range of impurity conduction. At large impurity concentrations (N₀=2. 410^17/cc) the resistivity is independent of temperature only if the concentration of mobile carriers is sufficiently large. The resistivity increases with a finite activation energy in strongly compensated samples.
Fritzsche et al. (Sun,) studied this question.