Thin‐film‐transistor‐ and diode‐addressed AMLCDs on polymer substrates

Amorphous‐silicon‐rich nitride (αSiN x :H) thin‐film diodes (TFDs) have been fabricated on glass, polyethersulphone (PES), polyacrylate (PAR), and polyethelyenenaphthalate (PEN) substrates at temperatures of 150–200°C, and a TFD‐addressed TN‐LCD fabricated on polyethersulphone is presented. Furthermore, poly‐Si thin‐film‐transistors (TFTs) have been fabricated on glass, polyimide (PI), and polyethersulphone at temperatures of 200–275°C, and active‐matrix arrays with drive circuitry have been realized. This work is an important step leading to a compact, lightweight, robust, system on a panel.