We have investigated exciton spin relaxation in GaAs quantum wells by picosecond time-resolved photoluminescence spectroscopy, in order to determine the origin of spin-relaxation processes and their dependence on excitonic localization. The studies have been done as a function of excitation and detection energy, lattice temperature, and carrier density. The excitation-energy dependence of the polarization decay time indicates that exchange interaction is the leading spin-relaxation mechanism at low temperature. However, we have not been able to explain the high-temperature (T{≥}50 K) dependence of the polarization decay time with either the D'yakonov-Perel' mechanism or with the exchange interaction. We have also found that spin relaxation is strongly affected by excitonic localization.
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Muñoz et al. (1995) studied this question.
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