Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 25, 1994Applied Physics Letters

Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substrates

View Full Paper
Ask AI
Bookmark
Share

Authors

RNR. NötzelSouth China Normal UniversityJTJiro TemmyoShizuoka UniversityHKHidehiko KamadaNTT (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Nötzel et al. (1994) studied this question.

synapsesocial.com/papers/6a1ec62094615786b59a81aahttps://doi.org/10.1063/1.113021
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Photoluminescence and electro-optic properties of small (25–35 nm diameter) quantum boxes1993 · 33 citations
  2. 2Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)1990 · 664 citations
  3. 3Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures1986 · 139 citations
  4. 4Multidimensional quantum well laser and temperature dependence of its threshold current1982 · 3,360 citations
  5. 5Excitonic optical nonlinearity and exciton dynamics in semiconductor quantum dots1987 · 298 citations