From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixed-valence regimes of the Anderson model.