Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 28, 2004Physical Review Letters

Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors

View Full Paper
Ask AI
Bookmark
Share

Authors

JAJoerg AppenzellerPurdue University West LafayetteMRM. RadosavljevićIntel (United States)JKJoachim KnochInstitute of Semiconductor Physics

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Appenzeller et al. (2004) studied this question.

synapsesocial.com/papers/6a1f16e9e800cc4eef5524e3https://doi.org/10.1103/physrevlett.92.048301
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Carbon Nanotubes as Schottky Barrier Transistors2002 · 1,271 citations
  2. 2Field-Modulated Carrier Transport in Carbon Nanotube Transistors2002 · 472 citations
  3. 3High-Mobility Nanotube Transistor Memory2002 · 528 citations
  4. 4Impact of the channel thickness on the performance of Schottky barrier metal–oxide–semiconductor field-effect transistors2002 · 111 citations
  5. 5Logic Gates and Computation from Assembled Nanowire Building Blocks2001 · 2,130 citations